Influence of gate oxide thickness on Sc2O3/GaN MOSFETs

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1757-1761

  Cho, Hyun ^a   Lee, K P ^b   Gila, B P ^b   Abernathy, C R ^b   Pearton, S J ^b   Ren, F ^b  

^a Miryang National University   (South Korea)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; GATES (TRANSISTOR); PASSIVATION; SCANDIUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

DRAIN CURRENT;

MOSFET DEVICES;

EID: 0042593211     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00128-X     Document Type: Conference Paper

References (43)

1. Kawai H., Hara M., Nakamura F., Imanaga S. Electronic Lett. 34:1998;592.
2. Khan M.A., Hu X., Tarakji A., Simin G., Yang J., Gaska R.et al. Appl. Phys. Lett. 77:2000;1339.
3. Hu X., Koudymov A., Simin G., Yang J., Khan M.A., Tarakji A.et al. Appl. Phys. Lett. 79:2001;2832.
4. Ren F., Hong M., Chu S.N.G., Marcus M.A., Schurman M.J., Baca A.et al. Appl. Phys. Lett. 73:1998;3839.
5. Johnson J.W., Luo B., Ren F., Gila B.P., Krishnamoorthy V., Abernathy C.R.et al. Appl. Phys. Lett. 77:2000;3230.
6. Zhang N.-Q., Keller S., Parish G., Heikman S., DenBaars S.P., Mishra U.K. IEEE Electron Dev. Lett. 21:2000;421.
7. Casey H.C. Jr., Fountain G.G., Alley R.G., Keller B.P., DenBaars S.P. Appl. Phys. Lett. 68:1996;1850.
8. Therrien R., Lucovsky G., Davis R.F. Phys. Stat. Solidi A. 176:1999;793 Therrien R., Lucovsky G., Davis R.F. Appl. Surf. Sci. 166:2000;513.
9. Therrien R., Lucovsky G., Davis R.F. Phys. Stat. Solidi A. 176:1999;793 Therrien R., Lucovsky G., Davis R.F. Appl. Surf. Sci. 166:2000;513.
10. Hashizume T., Alekseev E., Pavlidis D., Boutros K.S., Redwing J. J. Appl. Phys. 88:2000;1983.
11. Khan M.A., Hu X., Simin G., Lunev G., Yang J., Gaska R.et al. IEEE Electron Dev. Lett. 21:2000;63.
12. Tarakji A., Hu X., Koudynov A., Simin G., Yang J., Khan M.A.et al. Solid-State Electronics. 46:2002;1211.
13. Johnson J.W., Gila B.P., Luo B., Lee K.P., Abernathy C.R., Pearton S.J.et al. J. Electrochem. Soc. 146:2001;4303.
14. Lay T.S., Hong M., Kwo T., Lee T.P., Hung W., Huang D.T. Solid-State Electronics. 45:2001;1679.
15. Binari S.C., Doverspike K., Kelner G., Dietrich H.B., Wickenden A.E. Solid-State Electronics. 41:1997;177.
16. Arulkumaran S., Egawa T., Ishikawa H., Jimbo T., Umeno M. Appl. Phys. Lett. 73:1998;809.
17. Ren F., Abernathy C.R., Mackenzie J.D., Gila B.P., Pearton S.J., Hong M.et al. Solid-State Electronics. 42:1998;2177.
18. Ivanov P.A., Levinshtein M.E., Simin G., Hu X., Yang J., Khan M.A.et al. Electronic Lett. 37:2001;1479.
19. Chen P., Wang W., Chua S.J., Zheng Y.D. Appl. Phys. Lett. 79:2001;3530.
20. Mistele D, Rotter T, Ferretti R, Fedler F, Klausiag H, Semchinova OK, et al. In: Mat Res Soc Symp Proc 639, G11.42.1, 2001.
21. Gila B.P., Johnson J.W., Mehandru R., Luo B., Onstine A.H., Allums K.K.et al. Phys. Stat. Solidi A. 188:2001;239.
22. Hong M, Ng H, Kwo M, Kortran A, Cho AY, Ren F, et al. In: Mat Res Soc Symp 622, T2.2, 2000.
23. Hong M., Anselm K.A., Kwo J., Ng H.M., Baillargeon J.N., Kortan A.R.et al. J. Vac. Sci. Technol. B. 18:2000;1453.
24. Irokawa Y., Nakano Y. Solid-State Electronics. 46:2002;1467.
25. Fu D.J., Kwon Y.H., Kang T.W., Park C.J., Baek K.H., Cho H.Y.et al. Appl. Phys. Lett. 80:2002;446.
26. Mistele D., Rotter T., Rover K.S., Paprotta S., Segboth M., Schewegler V.et al. Mat Sci Eng B. 93:2002;107.
27. Pearton S.J., Ren F., Zhang A.P., Lee K.P. Mat. Sci. Eng. R. 30:2000;55.
28. Green B.M., Chu K.K., Chumbes E.M., Smart J.A., Shealy J.R., Eastman L.F. IEEE Electron Dev. Lett. 21:2000;268.
29. Eastman L.F., Tilak V., Smart J., Green B.M., Chumbes E.M., Dimitrov R.et al. IEEE Trans. Electron Dev. 48:2001;479.
30. Kohn E., Daumiller I., Schmid P., Nguyen N.X., Nguyen C.N. Electronic Lett. 35:1999;1022.
31. Lee J.-S., Vescan A., Wieszt A., Dietrich R., Leier H., Kwon Y.-S. Electronic Lett. 37:2001;130.
32. Hu X., Koudymov A., Simin G., Yang J., Khan M.A., Tarakji A.et al. Appl. Phys. Lett. 79:2001;2832.
33. Nguyen N.X., Nguyen C., Grider D.E. Electronic Lett. 35:1999;1356.
34. Daumiller I., Kirchner C., Kamp M., Ebeling K.J., Kohn E. IEEE Electron Dev. Lett. 20:1999;448.
35. Tarakji A., Simin G., Ilinskaya N., Hu X., Kumar A., Koudymov A.et al. Appl. Phys. Lett. 78:2001;2169.
36. Chumbes E.M., Smart J.A., Prunty T., Shealy J.M. IEEE Trans. Electron Dev. 48:2001;416.
37. Binari S.C., Ikossi K., Roussos J.A., Kruppa W., Park D., Dietrich H.B.et al. IEEE Trans. Electron Dev. 48:2001;465.
38. Luo B., Johnson J.W., Kim J., Mehandru R., Ren F., Gila B.P.et al. Appl. Phys. Lett. 80:2002;1661.
39. Luo B., Mahandru R., Kim J., Ren F., Gila B.P., Onstine A.H.et al. J. Electrochem. Soc. 149:2002;G613.
40. Kim J., Mahandru R., Luo B., Ren F., Gila B.P., Onstine A.H.et al. Appl. Phys. Lett. 80:2002;4555.
41. Kim J., Mahandru R., Luo B., Ren F., Gila B.P., Onstine A.H.et al. Appl. Phys. Lett. 81:2002;373.
42. Edgar J.H., Amano H. Properties of GaN and group III nitrides. 2000;INSPEI, IEEE, London.
43. Shur M. Physics of semiconductor devices. 1990;Prentice Hall, Englewood Cliffs, NJ.