First AlGaN/GaN MOSFET with photoanodic gate dielectric

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 107-111

  Mistele, D ^a   Rotter, T ^a   Rover K S ^a   Paprotta, S ^a   Seyboth, M ^b   Schwegler, V ^b   Fedler, F ^a   Klausing, H ^a   Semchinova, O K ^a   Stemmer, J ^a   Aderhold, J ^a   Graul, J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

AlGaN GaN heterostructures; HFET; MOSFET; Photoanodic dielectric; Photoelectrochemical oxidation; Wet chemical processing

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; ELECTRIC CONDUCTANCE; ETCHING; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; MOSFET DEVICES; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH;

PHOTOANODIC GATE DIELECTRICS; PHOTOELECTROCHEMICAL (PEC) OXIDATIONS;

GALLIUM NITRIDE;

EID: 0037198495     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00052-1     Document Type: Conference Paper

References (16)