Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 88, Issue 4, 2000, Pages 1983-1986

  Hashizume, Tamotsu ^a,c   Alekseev, Egor ^a   Pavlidis, Dimitris ^a   Boutros, Karim S ^b   Redwing, Joan ^b  

^a University of Michigan   (United States)

^b Epitronics/ATMI   (United States)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001067856     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1303722     Document Type: Article

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