Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation

Electronics Letters

Volumn 37, Issue 2, 2001, Pages 130-132

  Lee, Jong Soo ^a   Vescan, A ^b   Wieszt, A ^b   Dietrich, R ^b   Leier, H ^b   Kwon, Young Se ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; EQUIVALENT CIRCUITS; GALLIUM NITRIDE; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON NITRIDE;

ALUMINUM GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035131801     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010100     Document Type: Article

References (4)

1. GREEN, B.M., CHU, K.K., CHUMBES, E.M., SMART, J.A., SHEALY, J.R., and EASTMAN, L.F.: 'The effect of surface passivation on the microwave characteristics of undoped A1GaN/GaN HEMT's', IEEE Electron. Device Lett., 2000, 21, (6), pp. 268-270
2. KOHN, E., DAUMILLER, I., SCHMID, P., NGUYEN, N.X., and NGUYEN, C.N.: 'Large signal frequency dispersion of A1GaN/GaN heterostructure field effect transistors', Electron. Lett., 1999, 35, pp. 1022-1024
3. BERROTH, A., and BOSCH, R.: 'Broad-band determination of the FET small-signal equivalent circuit', IEEE Trans. Micron: Theory Tech., 1990, 38, pp. 891-895
4. DAMBRINE, G., CAPPY, A., HELIODORE, F., and PLAYEZ. E.: 'A new method for determining the FET small-signal equivalent circuit', IEEE Trans. Microw. Theory Tech., 1988, 36, (7), pp. 1151-1159