Observation of inversion behavior in n-type GaN planar metal-insulator-semiconductor capacitor

Solid-State Electronics

Volumn 46, Issue 9, 2002, Pages 1467-1469

  Irokawa, Yoshihiro ^a,b   Nakano, Yoshitaka ^a  

^a Rd Management Section   (Japan)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CAPACITORS; CHARACTERIZATION; ELECTRIC POTENTIAL; ENERGY GAP; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOSFET DEVICES; SEMICONDUCTOR LASERS; SUBSTRATES;

BAND GAP; CAPACITANCE TRANSIENTS;

MIS DEVICES;

EID: 0036721683     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00086-2     Document Type: Article

References (10)