Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 793-796

  Therrien, R ^a   Lucovsky, G ^a   Davis, R F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEPOSITION; FIELD EFFECT TRANSISTORS; MOS DEVICES; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS;

REMOTE PLASMA-ASSISTED PROCESSING;

HETEROJUNCTIONS;

EID: 0033221558     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<793::AID-PSSA793>3.0.CO;2-V     Document Type: Article

References (5)

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5. G. LUCOVSKY, A. ROZAJ-BRVAR, and R. F. DAVIS, in: The Structure of Non-Crystalline Materials, Eds. P. H. GASKELL, J. M. PARKER, and E. A. DAVIS, Taylor & Francis. London. 1982 (p. 193).