High Breakdown GaN HEMT with Overlapping Gate Structure

IEEE Electron Device Letters

Volumn 21, Issue 9, 2000, Pages 421-423

  Zhang, N Q ^a   Keller, S ^a   Parish, G ^a   Heikman, S ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

Electric breakdown; GaN; HEMT

Indexed keywords

EID: 85008053944     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.863096     Document Type: Article

References (9)

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