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Volumn 231, Issue 3, 2001, Pages 322-328

Structural and optical properties of thick freestanding GaN templates

(9) Freitas Jr , J A a Braga, G C B b Moore, W J c Tischler, J G a Culbertson, J C a Fatemi, M a Park, S S d Lee, S K d Park, Y d

a NAVAL RESEARCH LABORATORY (United States)

b UNIVERSITY OF BRASILIA (Brazil)

c SFA INC (United States)

d Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

A1. Absorption; A1. Atomic force microscopy; A1. Photoluminescence; A1. Raman; A1. X ray diffraction; A3. Hydride vapor phase epitaxy; B2. Semiconducting gallium compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINDING ENERGY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; LIGHT ABSORPTION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR GROWTH; SPECTROMETERS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

FREETSTANDING HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035480387 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01456-7 Document Type: Conference Paper

Times cited : (50)

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