Theory of doping and defects in III-V nitrides

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 505-510

  Van De Walle, Chris G ^a   Stampfl, Catherine ^a   Neugebauer, Jörg ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

Compensation; Doping; First principles calculations; Hydrogen; Oxygen; Vacancies

Indexed keywords

ALUMINUM ALLOYS; CARRIER CONCENTRATION; CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; GALLIUM ALLOYS; HYDROGEN; OXYGEN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SOLUBILITY;

FIRST PRINCIPLES CALCULATIONS;

NITRIDES;

EID: 0032094135     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00340-6     Document Type: Article

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