|
Volumn 39, Issue 10 B, 2000, Pages
|
Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
c
NONE
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ELECTRON GAS;
ELECTRON TRANSPORT PROPERTIES;
HALL EFFECT;
MAGNETIC FIELD EFFECTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOLECULAR BEAM EPITAXY;
OSCILLATIONS;
PLASMA APPLICATIONS;
SAPPHIRE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
THERMAL EFFECTS;
ALUMINUM GALLIUM NITRIDE;
SHUBNIKOV DE HAAS OSCILLATIONS;
TWO DIMENSIONAL ELECTRON GAS;
HETEROJUNCTIONS;
|
EID: 0034291237
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.l1023 Document Type: Article |
Times cited : (11)
|
References (13)
|