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Volumn 3, Issue , 1998, Pages

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective metal organic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COALESCENCE; DEPOSITION; DIELECTRIC FILMS; EXCITONS; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0345648170     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000922     Document Type: Article
Times cited : (11)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.