Model development of GaN MOVPE growth chemistry for reactor design

Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 2-9

  Sun, Jingxi ^a   Redwing, J M ^b   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

^b Epitronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL FLUID DYNAMICS; METALLORGANIC VAPOR PHASE EPITAXY; REACTION KINETICS; SEMICONDUCTOR GROWTH;

HIGH TEMPERATURE FLOW SHEETS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033879056     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0085-5     Document Type: Article

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