InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours

MRS Bulletin

Volumn 23, Issue 5, 1998, Pages 37-43

  Nakamura, Shuji ^a,b,c  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b NICHIA CORPORATION   (Japan)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONTINUOUS WAVE LASERS; FEEDBACK; FREQUENCY MODULATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

ALUMINUM GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE;

QUANTUM WELL LASERS;

EID: 0042673587     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/s0883769400030414     Document Type: Article

References (19)

1. For a review, see S. Nakamura and G. Fasol, The Blue Laser Diode, 1st ed. (Springer-Verlag, Berlin, 1997).
2. K. Itaya, M. Onomura, J. Nishino, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun, Y. Ohba, G. Hatakoshi, and M. Ishikawa, Jpn. J. Appl. Phys. Lett. 35 (1996) p. L1315.
3. G.E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, H.S. Kong, H.M. Dieringer, J.A. Edmond, J.D. Brown, J.T. Swindell, and J.F. Schetzina, Electron. Lett. 33 (1997) p. 1556.
4. M.P. Mack, A. Abare, M. Aizcorbe, P. Kozodoy, S. Keller, U.K. Mishra, L. Coldren, and S. DenBaars, MRS Internet J. Nitride Semicond. Res. 2 (41) (1997), available from http:// nsr.mij.mrs.org/2/5/.
5. A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota, and T. Tanahashi, Jpn. J. Appl. Phys. Lett. 36 (1997) p. L1330.
6. F. Nakamura, T. Kobayashi, T. Asatsuma, K. Funato, K. Yanashima, S. Hashimoto, K. Naganuma, S. Tomioka, T. Miyajima, E. Morita, H. Kawai, and M. Ikeda, presented at ICNS '97, Tokushima, Japan, October 27-31, 1997.
7. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Jpn. J. Appl. Phys. Lett. 36 (1997) p. L1059.
8. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, presented at ICNS '97, Tokushima, Japan, October 27-31, 1997.
9. J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth 27 (1974) p. 118.
10. A. Usui, H. Sunakawa, A. Sakai, and A. Yamaguchi, Jpn. J. Appl. Phys. Lett. 36 (1997) p. L899.
11. T.S. Zheleva, O.H. Nam, M.D. Bremser, and R.F. Davis, Appl. Phys. Lett. 71 (1997) p. 2472.
12. Y. Kato, S. Kitamura, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth 144 (1994) p. 133.
13. S.D. Lester, F.A. Ponce, M.G. Craford, and D.A. Steigerwald, Appl. Phys. Lett. 66 (1995) p. 1249.
14. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, ibid. 69 (1996) p. 4188.
15. S. Yamashita, A. Ohishi, T. Kajimura, M. Inoue, and Y. Fukui, IEEE J. Quantum Electron. 25 (1989) p. 1483.
16. T. Takayama, O. Imafuji, H. Sugiura, M. Yuri, H. Naito, M. Kume, A. Yoshikawa, and K. Itoh, Appl. Phys. Lett. 65 (1994) p. 1211.
17. M. Suzuki and T. Uenoyama, Jpn. J. Appl. Phys. 35 (1996) p. 1420.
18. Ibid., Appl. Phys. Lett. 69 (1996) p. 3378.
19. W.W. Chow, A.F. Wright, and J.S. Nelson, ibid. 68 (1996) p. 296.