Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 349-352

  Keller, S ^a   Keller, B P ^a   Kapolnek, D ^a   Mishra, U K ^a   DenBaars, S P ^a   Shmagin, I K ^b   Kolbas, R M ^b   Krishnankutty, S ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; LUMINESCENCE; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE; INDIUM NITRIDE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0030645822     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00553-2     Document Type: Article

References (9)

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9. C.-K. Sun, S. Keller, G. Wang, M.S. Minsky, J.E. Bowers and S.P. DenBaars, unpublished results.