Recombination processes in InxGa1-xN light-emitting diodes studied through optically detected magnetic resonance

Applied Physics Letters

Volumn 73, Issue 21, 1998, Pages 3123-3125

  Glaser, E R ^a   Kennedy, T A ^a   Carlos, W E ^a   Ruden, P P ^b   Nakamura, S ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b University of Minnesota   (United States)

^c NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; ETCHING; HOLE TRAPS; MAGNETIC RESONANCE; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

HOLE DIFFUSION; OPTICAL DETECTION; OPTICAL EXCITATION;

LIGHT EMITTING DIODES;

EID: 0032561598     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122693     Document Type: Article

References (23)

1. For a review, see S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
2. S. Chichibu, T. Deguchi, T. Sota, K. Wada, and S. Nakamura, Mater. Res. Soc. Symp. Proc. 482, 613 (1998), and references therein.
3. P. Perlin, V. Iota, B. A. Weinstein, P. Wisniewski, T. Suski, P. G. Eliseev, and M. Osinski, Appl. Phys. Lett. 70, 2993 (1997).
4. K. P. O'Donnell, T. Breitkopf, H. Kalt, W. Van Der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, Appl. Phys. Lett. 70, 1843 (1997).
5. Y. Narukawa, Y. Kawakami, M. Fusato, S. Fujita, S. Fujita, and S. Nakamura, Appl. Phys. Lett. 70, 981 (1997).
6. F. S. Choa, J. Y. Fan, P.-L. Liu, J. Sipior, G. Gao, G. M. Carter, and Y. J. Chen, Appl. Phys. Lett. 69, 3668 (1997).
7. N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair, Appl. Phys. Lett. 72, 40 (1998).
8. M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour, N. M. Johnson, and S. Brennan, Appl. Phys. Lett. 72, 1730 (1998).
9. W. E. Carlos and S. Nakamura, Appl. Phys. Lett. 70, 2019 (1997).
10. Recent work [M. D. McCluskey, C. G. Van de Walle, C. P. Master, L. T. Romano, and N. M. Johnson, Appl. Phys. Lett. 72, 2725 (1998)] suggests that these x values may be too high.
11. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).
12. T. A. Kennedy, E. R. Glaser, W. E. Carlos, P. P. Ruden, and S. Nakamura, to be published in GaN and Related Alloys, edited by S. J. Pearton, C. Kuo, T. Uenoyama, and A. F. Wright (Materials Research Society, Pittsburgh, 1999).
13. E. R. Glaser, T. A. Kennedy, K. Doverspike, L. B. Rowland, D. K. Gaskill, J. A. Freitas, Jr., M. Asif Khan, D. T. Olson, J. N. Kuznia, and D. K. Wickenden, Phys. Rev. B 51, 13326 (1995), and references therein.
14. J. J. Hopfield, Phys. Chem. Solids 15, 97 (1960).
15. See, for example, E. L. Ivchenko and A. A. Kiselev, Sov. Phys. Semicond. 26, 827 (1992).
16. M. Kunzer, J. Baur, U. Kaufmann, J. Schneider, H. Amano, and I. Akasaki, Solid-State Electron. 41, 189 (1997), and references therein.
17. F. K. Koschnick, K. Michael, J.-M. Spaeth, B. Beaumont, P. Gibart, J. Off, A. Sohmer, and F. Scholz, J. Cryst. Growth 189/190, 561 (1998).
18. G. E. Pake and T. L. Estle, The Physical Principles of Electron Paramagnetic Resonance (Benjamin, Reading, MA, 1973).
19. J. L. Patel, J. E. Nicholls, and J. J. Davies, J. Phys. C 14, 1339 (1981).
20. L. S. Dang, K. M. Lee, G. D. Watkins, and W. J. Choyke, Phys. Rev. Lett. 45, 390 (1980).
21. C. G. Van de Walle and J. Neugebauer, Appl. Phys. Lett. 70, 2577 (1997).
22. E. S. Jeon, V. Kozlov, Y.-K. Song, A. Vertikov, M. Kuball, A. V. Nurmikko, H. Liu, C. Chen, R. S. Kern, C. P. Kuo, and M. G. Craford, Appl. Phys. Lett. 69, 4194 (1996).
23. J. P. Bergman, N. Saksulv, J. Dalfors, P. O. Holtz, B. Monemar, H. Amano, and I. Akasaki, Mater. Res. Soc. Symp. Proc. 482, 631 (1998).