Single event gate rupture in thin gate oxides

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 2345-2352

  Sexton, F W ^a   Fleetwood, D M ^a   Shaneyfelt, M R ^a   Dodd, P E ^a   Hash, G L ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; ENERGY TRANSFER; IONS; OXIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE TESTING;

LINEAR ENERGY TRANSFER (LET); SINGLE EVENT GATE RUPTURE (SEGR);

GATES (TRANSISTOR);

EID: 0031386902     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659060     Document Type: Article

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