Breakdown of gate oxides during irradiation with heavy ions

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2500-2508

  Johnston, A H ^a   Swift, G M ^a   Miyahira, T ^a   Edmonds, L D ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; ENERGY TRANSFER; HEAVY IONS; ION BOMBARDMENT; OXIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING;

LINEAR ENERGY TRANSFER (LET);

GATES (TRANSISTOR);

EID: 0032319589     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736491     Document Type: Article

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