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IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1410-1414

Cell design modifications to harden a N-channel power IGBT against single event latchup

(7) Lorfevre E a Sagnes, B a Bruguier, G a Palau, J M a Gasiot, J a Calvet, M C a Ecoffet, R a

a UNIV MONTPELLIER (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; FAILURE ANALYSIS; FLIP FLOP CIRCUITS; HEAVY IONS; INTEGRATED CIRCUIT LAYOUT; POWER INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE STRUCTURES; THYRISTORS; TWO DIMENSIONAL;

INSULATED GATE BIPOLAR TRANSISTOR; POWER DEVICES; SINGLE EVENT LATCHUP;

RADIATION HARDENING;

EID: 0033306969 PISSN: 00189499 EISSN: None Source Type: Journal
DOI: 10.1109/23.819100 Document Type: Article

Times cited : (5)

References (6)

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2
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- IEEE Data Workshop Record, Pp
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3
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- Heavy ion induced failures in a power IGBT
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- E. Lorfêvre, C. Dachs, Céline Detcheverry, Jean-Marie Palau, Franck Roubaud, Jean Gasiot, Marie-Catherine Calvet and Robert Ecoffet, "Heavy ion induced failures in a power IGBT", IEEE Trans. Nud. Sei., vol. 44, No 6, pp 2353-2357, December 1997.
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- Lorfêvre, E.¹ Dachs, C.² Detcheverry, C.³ Palau, J.-M.⁴ Roubaud, F.⁵ Gasiot, J.⁶ Calvet, M.-C.⁷ Ecoffet, R.⁸

4
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- IEEE Trans. Nud. Sei.
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5
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6
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- Experimental and 2D Simulation Study of the SEB
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- IEEE Trans. Nud. Sci.t
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