SEGR and SEB in N-channel power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2927-2931

  Allenspach, M ^a   Dachs, C ^a   Johnson, G H ^a   Schrimpf, R D ^b   Lorfevre, E ^b   Palau, J M ^b   Brews, J R ^c   Galloway, K P ^c   Titus, J L ^d   Wheatley, C F ^d  

^a University of Arizona   (United States)

^b UNIVERSITÉ MONTPELLIER II   (France)

^c NAVAL SURFACE WARFARE CENTER   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); ION BOMBARDMENT; POWER ELECTRONICS; RADIATION EFFECTS; RADIATION HARDENING;

SINGLE EVENT BURNOUTS (SEB); SINGLE EVENT GATE RUPTURE (SEGR);

MOSFET DEVICES;

EID: 0030359034     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556887     Document Type: Article

References (13)

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