A physical interpretation for the single-event-gate-rupture cross-section of N-channel power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2932-2937

  Johnson, G H ^a   Galloway, K P ^a   Schrimpf, R D ^a   Titus, J L ^b   Wheatley, C F ^b   Allenspach, M ^c   Dachs, C ^c  

^a UNIVERSITY OF ARIZONA   (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

^c UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); POWER ELECTRONICS; RADIATION EFFECTS;

SINGLE EVENT GATE RUPTURE (SEGR);

MOSFET DEVICES;

EID: 0030370401     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556888     Document Type: Article

References (14)

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