Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2938-2943

  Titus, J L ^a   Wheatley, C F ^a   Allenspach, M ^b   Schrimpf, R D ^b   Burton, D I ^c   Brews, J R ^c   Galloway, K F ^d   Pease, R L ^e  

^a NAVAL SURFACE WARFARE CENTER   (United States)

^b University of Arizona ^*

^c UNIVERSITY OF ARIZONA   (United States)

^d INTERSIL CORPORATION   (United States)

^e RLP Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); ION BEAMS; ION BOMBARDMENT; POWER ELECTRONICS; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTOR DEVICE TESTING;

SINGLE EVENT GATE RUPTURE (SEGR);

MOSFET DEVICES;

EID: 0030353809     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556889     Document Type: Article

References (9)

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2. M. Allenspach, I. Mouret, J. L. Titus, C. F. Wheatley, R. L. Pease, J. R. Brews, R. D. Schrimpf, and K. F. Galloway, "Single-Event Gate Rupture in Power MOSFETs; Prediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence," IEEE Trans. Nucl. Sei. , NS-42, pp. 1922-1927, Dec. 1995.
3. J. L. Titus and C. F. Wheatley, "Experimental Studies of SingleEvent Gate Rupture and Burnout in Vertical Power MOSFETs," IEEE Trans. Nucl. Sei. , NS-43, pp. 533-545, April 1996.
4. Silvaco International, ATLAS, Device Simulation Software, 1995.
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7. S. M. Sze, Physics of Semiconductors Devices, New York: John Wiley & Sons, 1981, pp. 431 -510.
8. C. F. Wheatley and G. M. Dolny, "COMFET - The Ultimate Power Device; A General Study of Power Devices," Solid State Technology, pp. 121-128, Nov. 1985.
9. 1. Mouret, M. Allenspach, R. Schrimpf, J. Brews, and K. Galloway, "Temperature and Angular Dependence of Substrate Response in SEGR," IEEE Trans. Nucl. Sei. , NS-41, pp. 2216-2221, Dec. 1994.