-
2
-
-
0027579607
-
-
1993.
-
D.F. Heidel, U. H. Bapst, K. A. Jenkins, L. M. Gepperl, and T. H. Zabel, "Ion microbeam radiation system," IEEE Trans. Nucl. Sei., vol. 40, pp. 127-134, 1993.
-
U. H. Bapst, K. A. Jenkins, L. M. Gepperl, and T. H. Zabel, "Ion Microbeam Radiation System," IEEE Trans. Nucl. Sei., Vol. 40, Pp. 127-134
-
-
Heidel, D.F.1
-
4
-
-
18344404533
-
-
1975.
-
R. Nobiling, Y. Civelekoglu, B. Povh, D. Schwalm, and K.Traxel, "Collimation of ion beams to micrometer dimensions," Nucl. Instmm. and Methods, vol. 130, pp. 325-334, 1975.
-
Y. Civelekoglu, B. Povh, D. Schwalm, and K.Traxel, "Collimation of Ion Beams to Micrometer Dimensions," Nucl. Instmm. and Methods, Vol. 130, Pp. 325-334
-
-
Nobiling, R.1
-
5
-
-
0024646422
-
-
1989.
-
G.F. Bench and G. J. F. Legge, "High resolution STIM," Nucl. Instmm. and Methods in Phys. Res., vols. B40/41, pp. 655-663, 1989.
-
And G. J. F. Legge, "High Resolution STIM," Nucl. Instmm. and Methods in Phys. Res., Vols. B40/41, Pp. 655-663
-
-
Bench, G.F.1
-
7
-
-
0026403654
-
-
1991.
-
K.M. Horn, B. L. Doyle, D. S. Walsh, and F. W. Sexton, "Application of the nuclear microprobe to the imaging of single event upsets in integrated circuits," Scanning Microscopy, vol. 5, no. 4, pp. 969-976, 1991.
-
B. L. Doyle, D. S. Walsh, and F. W. Sexton, "Application of the Nuclear Microprobe to the Imaging of Single Event Upsets in Integrated Circuits," Scanning Microscopy, Vol. 5, No. 4, Pp. 969-976
-
-
Horn, K.M.1
-
8
-
-
0028446648
-
-
1994.
-
S. Metzger, J. Dreute, W. Heinrich, H. Rocher, B.E. Fischer, R. HarboeSorensen, and L. Adams, "Heavy ion microscopy of single event upsets in CMOS SRAM's," IEEE Trans. Nucl. Sei., vol. 41, pp. 589-592, 1994.
-
J. Dreute, W. Heinrich, H. Rocher, B.E. Fischer, R. HarboeSorensen, and L. Adams, "Heavy Ion Microscopy of Single Event Upsets in CMOS SRAM's," IEEE Trans. Nucl. Sei., Vol. 41, Pp. 589-592
-
-
Metzger, S.1
-
10
-
-
38949192329
-
-
1992.
-
[101T. Kamiya, N. Utsunomiya, E. Minehara, R. Tanaka, and I. Ohdomari, "Microbeam system for study of single event upset of semiconductor devices," Nucl. Instrum. and Methods in Phys. Res., vol. B64, pp. 362-366, 1992.
-
N. Utsunomiya, E. Minehara, R. Tanaka, and I. Ohdomari, "Microbeam System for Study of Single Event Upset of Semiconductor Devices," Nucl. Instrum. and Methods in Phys. Res., Vol. B64, Pp. 362-366
-
-
Kamiya, T.1
-
11
-
-
0003627470
-
-
1993.
-
M. Takai, H. Sayama, H. Kimura, Y. Ohno, and S. Satoh, "Softor Immunity in a DRAM Investigated by Nuclear Microprobes," Nucl. Instrum. and Methods in Phys. Res., vol. B77, pp. 344-348, 1993.
-
H. Sayama, H. Kimura, Y. Ohno, and S. Satoh, "Softor Immunity in a DRAM Investigated by Nuclear Microprobes," Nucl. Instrum. and Methods in Phys. Res., Vol. B77, Pp. 344-348
-
-
Takai, M.1
-
12
-
-
0000507434
-
-
1993.
-
G.J. F. Legge. J. S. Laird, L. M. Mason, A. Saint, M. Cholewa, and D. N. Jamieson, "High resolution imaging with high energy ion beams," Nucl. Instrum. and Methods in Phys. Res., vol. B77. pp. 153-168, 1993.
-
Legge. J. S. Laird, L. M. Mason, A. Saint, M. Cholewa, and D. N. Jamieson, "High Resolution Imaging with High Energy Ion Beams," Nucl. Instrum. and Methods in Phys. Res., Vol. B77. Pp. 153-168
-
-
-
13
-
-
0029213410
-
-
303-310.
-
T.J. Aton, J. A. Scitchik, S. D. Hantz, and H. Shichijo, "Accurate measurements of small charges collected on junctions from alpha particle strikes using an accelerator-produced microbeam," in Proc. Int. Reliability Physics Symp., 1995, pp. 303-310.
-
J. A. Scitchik, S. D. Hantz, and H. Shichijo, "Accurate Measurements of Small Charges Collected on Junctions from Alpha Particle Strikes Using an Accelerator-produced Microbeam," in Proc. Int. Reliability Physics Symp., 1995, Pp.
-
-
Aton, T.J.1
-
14
-
-
26544431659
-
-
1992.
-
I. Ohdomari, M. Sugimori, M. Koh, K. Noritake, Y. Takiguchi, H. Shimizu, T. Tanaka, T. Kamiya, N. Utsunomiya, and E. Minehara, "Ion microprobe system combined with scanning electron microprobe for high precision aiming," Nucl. Instrum. and Methods in Phys. Res., vol. B72, pp. 436-441, 1992.
-
M. Sugimori, M. Koh, K. Noritake, Y. Takiguchi, H. Shimizu, T. Tanaka, T. Kamiya, N. Utsunomiya, and E. Minehara, "Ion Microprobe System Combined with Scanning Electron Microprobe for High Precision Aiming," Nucl. Instrum. and Methods in Phys. Res., Vol. B72, Pp. 436-441
-
-
Ohdomari, I.1
-
15
-
-
0041132251
-
-
1995.
-
B.E. Fischer and S. Metzger, "Aiming and hit verification in single ion techniques," Nucl. Instrum. and Methods in Phys. Res., vol. B104, pp. 7-12, 1995.
-
And S. Metzger, "Aiming and Hit Verification in Single Ion Techniques," Nucl. Instrum. and Methods in Phys. Res., Vol. B104, Pp. 7-12
-
-
Fischer, B.E.1
-
17
-
-
0019551234
-
-
1981.
-
C.M. Hsieh, P. C. Murley, and R. R. O'Brien, "A field-funneling effect on the collection of alpha-particle generated carriers in silicon devices." IEEE Electron Dev. If.tt., vol. EDL-2, pp. 103-105, 1981.
-
P. C. Murley, and R. R. O'Brien, "A Field-funneling Effect on the Collection of Alpha-particle Generated Carriers in Silicon Devices." IEEE Electron Dev. If.tt., Vol. EDL-2, Pp. 103-105
-
-
Hsieh, C.M.1
-
18
-
-
0020296981
-
-
1982.
-
A.R. Knudson and A. B. Campbell, "Charge collection measurements for energetic ions in silicon," IEEE Trans. Nucl. Sei., vol. NS-29, pp. 2067-2071, 1982.
-
And A. B. Campbell, "Charge Collection Measurements for Energetic Ions in Silicon," IEEE Trans. Nucl. Sei., Vol. NS-29, Pp. 2067-2071
-
-
Knudson, A.R.1
-
19
-
-
0020904494
-
-
1983.
-
A.B. Campbell, A. R. Knudson. P. Shapiro, D. O. Patterson, and L. E. Seiberling, "Charge collection in test structures," IEEE Trans. Nucl. Sei., vol. NS-30, pp. 4486-4492, 1983.
-
A. R. Knudson. P. Shapiro, D. O. Patterson, and L. E. Seiberling, "Charge Collection in Test Structures," IEEE Trans. Nucl. Sei., Vol. NS-30, Pp. 4486-4492
-
-
Campbell, A.B.1
-
20
-
-
0021615545
-
-
1984.
-
A.R. Knudson, A. B. Campbell, P. Shapiro, W. J. Stapor, E. A. Wolicki, and E. L. Petersen, S. E. Diehl-Nagle, J. Hauser, and P. V. Dressendorfer, "Charge collection in multi-layer structures," IEEE Trans. Nucl. Sei., vol. NS-31, pp 1149-1154, 1984.
-
A. B. Campbell, P. Shapiro, W. J. Stapor, E. A. Wolicki, and E. L. Petersen, S. E. Diehl-Nagle, J. Hauser, and P. V. Dressendorfer, "Charge Collection in Multi-layer Structures," IEEE Trans. Nucl. Sei., Vol. NS-31, Pp 1149-1154
-
-
Knudson, A.R.1
-
21
-
-
77957230665
-
-
1985.
-
J.R. Hauser, S. E. Diehl-Nagle, A. R. Knudson, and A. B. Campbell, "Ion Track Shunt Effects in Multi-Junction Structures," IEEE Trans. Nucl. Sei., vol. NS-32, pp. 4115-4121, 1985.
-
S. E. Diehl-Nagle, A. R. Knudson, and A. B. Campbell, "Ion Track Shunt Effects in Multi-Junction Structures," IEEE Trans. Nucl. Sei., Vol. NS-32, Pp. 4115-4121
-
-
Hauser, J.R.1
-
22
-
-
0022865246
-
-
1986.
-
A.R. Knudson, A. B. Campbell, J. R. Hauser, M. lessee, W. .1. Stapor, and P. Shapiro, "Charge transport by the ion shunt effect," IEEE Trans. Nucl. Sei., vol. NS-33, pp. 1560-1564, 1986.
-
A. B. Campbell, J. R. Hauser, M. Lessee, W. .1. Stapor, and P. Shapiro, "Charge Transport by the Ion Shunt Effect," IEEE Trans. Nucl. Sei., Vol. NS-33, Pp. 1560-1564
-
-
Knudson, A.R.1
-
23
-
-
77957243156
-
-
1987.
-
A.R. Knudson and A. B. Campbell, "Charge collection in bipolar transistors," IEEE Trans. Nucl. Sei., vol. NS 34, pp. 1246-1250, 1987.
-
And A. B. Campbell, "Charge Collection in Bipolar Transistors," IEEE Trans. Nucl. Sei., Vol. NS 34, Pp. 1246-1250
-
-
Knudson, A.R.1
-
24
-
-
0026977696
-
-
435-439.
-
P. 1. McNulty, W.J. Beauvais, D. R. Roth, J. E. Lynch, A. R. Knudson, and W. J. Stapor, "Microbeam analysis of MOS circuits," in RADECS 91: First European Conf. on Radiation and its Effects on Devices and Systemsl99l, pp. 435-439.
-
McNulty, W.J. Beauvais, D. R. Roth, J. E. Lynch, A. R. Knudson, and W. J. Stapor, "Microbeam Analysis of MOS Circuits," in RADECS 91: First European Conf. on Radiation and Its Effects on Devices and Systemsl99l, Pp.
-
-
-
25
-
-
0038467182
-
-
1986.
-
R.S. Wagner, J. M. Bradley, C. J. Maggiore, J. G. Beery, and R. B. Hammond, "An approach to measure ultrafast-funneling-current transients," IEEE Trans. Nucl. Sei., vol. NS-33, pp. 1651-1656, 1986.
-
J. M. Bradley, C. J. Maggiore, J. G. Beery, and R. B. Hammond, "An Approach to Measure Ultrafast-funneling-current Transients," IEEE Trans. Nucl. Sei., Vol. NS-33, Pp. 1651-1656
-
-
Wagner, R.S.1
-
26
-
-
0041792978
-
-
1987.
-
R.S. Wagner, J. M. Bradley, N. Bordes, C. J. Maggiore, D. N. Sinha, and R. B. Hammond, "Transient measurements of ultrafast charge collection in semiconductor diodes," IEEE Trans. Nucl. Sei., vol. NS-34, pp. 1240-1245, 1987.
-
J. M. Bradley, N. Bordes, C. J. Maggiore, D. N. Sinha, and R. B. Hammond, "Transient Measurements of Ultrafast Charge Collection in Semiconductor Diodes," IEEE Trans. Nucl. Sei., Vol. NS-34, Pp. 1240-1245
-
-
Wagner, R.S.1
-
27
-
-
0024169725
-
-
1988.
-
R.S. Wagner, N. Bordes, A. R. Knudson, and A. B. Campbell, "Alpha, boron, silicon, and iron ion-induced current transients in low-capacitance .silicon and GaAs diodes," IEEE Trans. Nucl. Sei, vol. NS-35, pp. 1578-1584, 1988.
-
N. Bordes, A. R. Knudson, and A. B. Campbell, "Alpha, Boron, Silicon, and Iron Ion-induced Current Transients in Low-capacitance .Silicon and GaAs Diodes," IEEE Trans. Nucl. Sei, Vol. NS-35, Pp. 1578-1584
-
-
Wagner, R.S.1
-
28
-
-
0024913731
-
-
1989.
-
S.J. Heileman, W. R. Eisenstadt, and R. M Fox, R. S. Wagner, N. Bordes, and J. M. Bradley, "CMOS VLSI single event transient characterization," IEEE Trans. Nucl. Sei., vol. 36, pp. 2287-2291, 1989.
-
W. R. Eisenstadt, and R. M Fox, R. S. Wagner, N. Bordes, and J. M. Bradley, "CMOS VLSI Single Event Transient Characterization," IEEE Trans. Nucl. Sei., Vol. 36, Pp. 2287-2291
-
-
Heileman, S.J.1
-
29
-
-
0024932013
-
-
1989.
-
A. Campbell, A. Knudson.D. McMorrow, W. Anderson, J. Roussos, S. Espy. S. Buchner, D. Kerns, and S. Kerns, "Ion induced charge collection in GaAs MESFET's," IEEE Trans. Nucl. Sei., vol. 36, pp. 2292-2299, 1989.
-
A. Knudson.D. McMorrow, W. Anderson, J. Roussos, S. Espy. S. Buchner, D. Kerns, and S. Kerns, "Ion Induced Charge Collection in GaAs MESFET's," IEEE Trans. Nucl. Sei., Vol. 36, Pp. 2292-2299
-
-
Campbell, A.1
-
30
-
-
0025660891
-
-
1990.
-
D. McMorrow, A.R. Knudson, and A. B. Campbell, "Fast Charge Collection in GaAs MESFET's," IEEE Trans. Nucl. Sei., vol. 37, pp. 1902-1908, 1990.
-
A.R. Knudson, and A. B. Campbell, "Fast Charge Collection in GaAs MESFET's," IEEE Trans. Nucl. Sei., Vol. 37, Pp. 1902-1908
-
-
McMorrow, D.1
-
31
-
-
0002247008
-
-
1991.
-
I. Nashiyama, T. Nishijima, H. Sekiguchi.Y. Shimano, and T. Goka, "Study of Basic Mechanisms of Single Event Upset Using High-Energy Microbeams," Nucl. Instrum, and Mettwds in Phys. Res., vol. B54, pp. 407-410, 1991.
-
T. Nishijima, H. Sekiguchi.Y. Shimano, and T. Goka, "Study of Basic Mechanisms of Single Event Upset Using High-Energy Microbeams," Nucl. Instrum, and Mettwds in Phys. Res., Vol. B54, Pp. 407-410
-
-
Nashiyama, I.1
-
32
-
-
0027807512
-
-
1993.
-
I. Nashiyama, T. Hirao, T. Kamiya, H. Yutoh, T. Nishijima, and H. Sekiguti, "Single-event current transients induced by high energy ion microbeams," IEEE Trans. Nucl. Sei., vol. 40, pp. 1931-1940, 1993.
-
T. Hirao, T. Kamiya, H. Yutoh, T. Nishijima, and H. Sekiguti, "Single-event Current Transients Induced by High Energy Ion Microbeams," IEEE Trans. Nucl. Sei., Vol. 40, Pp. 1931-1940
-
-
Nashiyama, I.1
-
33
-
-
0020312672
-
-
1982.
-
F.B. McLean and T. R. Oldham, ;'Charge funneling in N and F-type Si substrates," IEEE Trans. Nucl. Sei., vol. NS-29, pp. 2018-2023, 1982.
-
And T. R. Oldham, ;'Charge Funneling in N and F-type Si Substrates," IEEE Trans. Nucl. Sei., Vol. NS-29, Pp. 2018-2023
-
-
McLean, F.B.1
-
34
-
-
0020952139
-
-
1983.
-
T.R. Oldham and F. B. McLean, "Charge collection measurements for heavy ions incident on N and P-type silicon, IEEE Trans. Nucl. Sei., vol. NS-30, pp. 4493-41500, 1983.
-
And F. B. McLean, "Charge Collection Measurements for Heavy Ions Incident on N and P-type Silicon, IEEE Trans. Nucl. Sei., Vol. NS-30, Pp. 4493-41500
-
-
Oldham, T.R.1
-
35
-
-
0001594486
-
-
1992.
-
M.B. H. Brccsc, P. J. C. King, G. W. Grime, and F. Watt, "Microcircuit imaging using an ion-beam induced charge," J. Appl. Phys., vol. 72, no. 6, pp. 2097-2104, 1992.
-
Brccsc, P. J. C. King, G. W. Grime, and F. Watt, "Microcircuit Imaging Using an Ion-beam Induced Charge," J. Appl. Phys., Vol. 72, No. 6, Pp. 2097-2104
-
-
-
37
-
-
0001460092
-
-
1993.
-
K..M. Horn, B. L. Doyle, F. W. Sexton, J. S. Laird, A. Saint, M. Cholewa, and G. J. F. I,egge, "Ion beam induced charge collection (IBICC) microscopy of ICs: Relation to single event upsets (SEU)," Nucl. Instrum. and Methods in Phys. Res., vol. B77, pp. 355-361, 1993.
-
B. L. Doyle, F. W. Sexton, J. S. Laird, A. Saint, M. Cholewa, and G. J. F. I,egge, "Ion Beam Induced Charge Collection (IBICC) Microscopy of ICs: Relation to Single Event Upsets (SEU)," Nucl. Instrum. and Methods in Phys. Res., Vol. B77, Pp. 355-361
-
-
Horn, K.M.1
-
38
-
-
0001573410
-
-
1993.
-
F.W. Sexton, K. M. Horn, B. L. Doyle, J. S. Laird, M. Cholewa, A. Saint, and G. J. F. Legge, "Ion-beam Induced charge-collection imaging of CMOS IC's," Nucl. Instrum. and Methods in Phys. Res., vol. B79, pp. 436-442, 1993.
-
K. M. Horn, B. L. Doyle, J. S. Laird, M. Cholewa, A. Saint, and G. J. F. Legge, "Ion-beam Induced Charge-collection Imaging of CMOS IC's," Nucl. Instrum. and Methods in Phys. Res., Vol. B79, Pp. 436-442
-
-
Sexton, F.W.1
-
39
-
-
0026400769
-
-
1991.
-
P.J. McNulty, W. J. Beauvais, and D. R. Roth. "Determination of SEU parameters of NMOS and CMOS SRAM's," IEEE Trans. Nucl. Sei., vol. 38, pp. 1463-1470, 1991.
-
W. J. Beauvais, and D. R. Roth. "Determination of SEU Parameters of NMOS and CMOS SRAM's," IEEE Trans. Nucl. Sei., Vol. 38, Pp. 1463-1470
-
-
McNulty, P.J.1
-
40
-
-
0027874495
-
-
1993.
-
F.W. Sexton, K. M. Horn, B. L. Doyle, J. S. Laird, M. Cholewa, A. SainL, and G. .1. F. Legge, "Relationship between IBICC imaging and SEU in CMOS IC's," IEEE Trans. Nucl. Sei, vol. 40, pp. 1787-1794, 1993.
-
K. M. Horn, B. L. Doyle, J. S. Laird, M. Cholewa, A. SainL, and G. .1. F. Legge, "Relationship between IBICC Imaging and SEU in CMOS IC's," IEEE Trans. Nucl. Sei, Vol. 40, Pp. 1787-1794
-
-
Sexton, F.W.1
-
41
-
-
0030127819
-
-
1996.
-
M. Takai, T. Kishimoto, Y. Ohno, H. Sayama, K. Sonoda, S. Satoh, T. Nishimura, H. Miyoshi, A. Kinomura, Y. Horino, and K. Fujii, "Soft error susceptibility and immune structures in dynamic random access memories (RRAM's) investigated by nuclear microprobes," IEEE Trans. Nucl. Sei., vol. 43, no. 2, pp. 696-704, 1996.
-
T. Kishimoto, Y. Ohno, H. Sayama, K. Sonoda, S. Satoh, T. Nishimura, H. Miyoshi, A. Kinomura, Y. Horino, and K. Fujii, "Soft Error Susceptibility and Immune Structures in Dynamic Random Access Memories (RRAM's) Investigated by Nuclear Microprobes," IEEE Trans. Nucl. Sei., Vol. 43, No. 2, Pp. 696-704
-
-
Takai, M.1
-
43
-
-
0026103180
-
-
1991.
-
L.M. Geppert, U. Bapst, D. F. Heidel, and K. A. Jenkins, "Ion microbeam probing of sense amplifiers to analyze single event upsets in a CMOS DRAM," IEEE J. Solid-Stale Circuits, vol. 26, pp. 132-134, 1991.
-
U. Bapst, D. F. Heidel, and K. A. Jenkins, "Ion Microbeam Probing of Sense Amplifiers to Analyze Single Event Upsets in a CMOS DRAM," IEEE J. Solid-Stale Circuits, Vol. 26, Pp. 132-134
-
-
Geppert, L.M.1
-
44
-
-
0000967632
-
-
1992.
-
B.L. Doyle, K. M. Horn, D. S. Walsh, and F. W. Sexton, "Single event upset imaging with a nuclear microprobe," Nucl. lustrum, and Methods in Phys. Res., vol. B64, pp. 313-320, 1992.
-
K. M. Horn, D. S. Walsh, and F. W. Sexton, "Single Event Upset Imaging with a Nuclear Microprobe," Nucl. Lustrum, and Methods in Phys. Res., Vol. B64, Pp. 313-320
-
-
Doyle, B.L.1
-
45
-
-
0026817842
-
-
1992.
-
K.M. Horn, B. L. Doyle, and F. W. Sexton, "Nuclear microprobe imaging of single-event upsets," IEEE Trans. Nucl. Sei., vol. 39, pp. 7-12, 1992.
-
B. L. Doyle, and F. W. Sexton, "Nuclear Microprobe Imaging of Single-event Upsets," IEEE Trans. Nucl. Sei., Vol. 39, Pp. 7-12
-
-
Horn, K.M.1
-
46
-
-
33747249800
-
-
36-46.
-
K.M. Horn, B. L. Doyle, F. W. Sexton, S. R. Lee, J. S. Laird, A. Saint, M Cholewa, G. J, F. Legge, Y. Mokuno, Y. Horino, and K. Fujii, "Applications of SEU-imaging, IBICC-imaging, and SEB-imaging to integrated circuit radiation testing," in Material Processing by NonTraditional 'techniques, Proc. HARMA Int. Symp., Feb 9-10, 1993, pp. 36-46.
-
B. L. Doyle, F. W. Sexton, S. R. Lee, J. S. Laird, A. Saint, M Cholewa, G. J, F. Legge, Y. Mokuno, Y. Horino, and K. Fujii, "Applications of SEU-imaging, IBICC-imaging, and SEB-imaging to Integrated Circuit Radiation Testing," in Material Processing by NonTraditional 'Techniques, Proc. HARMA Int. Symp., Feb 9-10, 1993, Pp.
-
-
Horn, K.M.1
-
47
-
-
17444433848
-
-
1972.
-
R.Grube, E. Fretwurst, and G. Lindstrom, Nucl. Instrum. and Methods, vol. 101, p. 97, 1972.
-
Fretwurst, and G. Lindstrom, Nucl. Instrum. and Methods, Vol. 101, P. 97
-
-
Rgrube, E.1
-
48
-
-
33747315434
-
-
1992.
-
For an excellent review of displacement damage effects in semiconductors, see G.P. Summers, "Displacement damage mechanisms and measurements," Tutorial Short Course Notes, IEEE Nuclear and Space Radiation Effects Conf. New Orleans, LA, 1992.
-
Excellent Review of Displacement Damage Effects in Semiconductors, See G.P. Summers, "Displacement Damage Mechanisms and Measurements," Tutorial Short Course Notes, IEEE Nuclear and Space Radiation Effects Conf. New Orleans, LA
-
-
An, F.1
-
50
-
-
21544437553
-
-
1994.
-
M.B. H Breese, J. S. Laird, G. R. Moloney, A. Saint, and D. N. Jamieson, "High signal to noise level ion beam induced charge images," Appl. Phys. Lett, vol. 64, no. 15, pp. 1962-1964, 1994.
-
Breese, J. S. Laird, G. R. Moloney, A. Saint, and D. N. Jamieson, "High Signal to Noise Level Ion Beam Induced Charge Images," Appl. Phys. Lett, Vol. 64, No. 15, Pp. 1962-1964
-
-
-
51
-
-
36449008902
-
-
1995.
-
M.B. H. Breese, A. Saint, F. W. Sexton, K. M. Horn, H. Schone, B. L. Doyle, J. S. Laird, and G. J. F. Legge, "Optimization of ion-beam induced charge microscopy for the analysis of integrated circuits," J. Appl. Phys., vol. 77, pp. 3734-3741, 1995.
-
Breese, A. Saint, F. W. Sexton, K. M. Horn, H. Schone, B. L. Doyle, J. S. Laird, and G. J. F. Legge, "Optimization of Ion-beam Induced Charge Microscopy for the Analysis of Integrated Circuits," J. Appl. Phys., Vol. 77, Pp. 3734-3741
-
-
-
52
-
-
0029492481
-
-
1995.
-
F.W. Sexton, K. M. Horn, B. L. Doyle, M. R. Shaneyfelt, and T. L. Meisenheimer, "Effects of ion damage on 1BTCC and SEU imaging," IEEE Trans. Nucl. Sei., vol. 42, pp. 1940-1947, 1995.
-
K. M. Horn, B. L. Doyle, M. R. Shaneyfelt, and T. L. Meisenheimer, "Effects of Ion Damage on 1BTCC and SEU Imaging," IEEE Trans. Nucl. Sei., Vol. 42, Pp. 1940-1947
-
-
Sexton, F.W.1
-
53
-
-
84938017128
-
-
1958.
-
G.C. Messenger and J. Spratt, "The effects of neutron irradiation of germanium and silicon," Proc. IRE, vol. 46, pp. 1036-1044, 1958.
-
And J. Spratt, "The Effects of Neutron Irradiation of Germanium and Silicon," Proc. IRE, Vol. 46, Pp. 1036-1044
-
-
Messenger, G.C.1
-
54
-
-
0023588453
-
-
1987.
-
B.L. Bhuva, R. L. Johnson, Jr., R. S. Gyurcsik, K. W. Fernald, and S. E. Kerns, "Quantification of the memory imprint effect for a charged particle environment," IEEE Trans. Nucl. Sei., vol. NS-34, pp. 1414-1418, 1987.
-
R. L. Johnson, Jr., R. S. Gyurcsik, K. W. Fernald, and S. E. Kerns, "Quantification of the Memory Imprint Effect for a Charged Particle Environment," IEEE Trans. Nucl. Sei., Vol. NS-34, Pp. 1414-1418
-
-
Bhuva, B.L.1
-
55
-
-
0024172399
-
-
1988.
-
C.L. Axness, J. R. Schwank, P. S. Winokur, J. S. Browning, R. Koga, and D. M. Fleetwood, "Single event upset in irradiated 16k CMOS SRAM's," IEEE Trans. Nucl. Sd., vol. 35, pp. 1602-1607, 1988.
-
J. R. Schwank, P. S. Winokur, J. S. Browning, R. Koga, and D. M. Fleetwood, "Single Event Upset in Irradiated 16k CMOS SRAM's," IEEE Trans. Nucl. Sd., Vol. 35, Pp. 1602-1607
-
-
Axness, C.L.1
-
56
-
-
0028712008
-
-
1994.
-
T. Matsukawa, A. Kishida, T. Tanii, M. Koh.K. Horita, K. Kara, B. Shigeta, M. Goto, S. Matusuda, S. Kuboyama, and I Ohdomari. "Total dose dependence of softor hardness in 64 kbit SRAM's evaluated by single-ion microprobe technique," IEEE Trans. Nucl. Sei., vol. 41, pp. 2071-2076, 1994.
-
A. Kishida, T. Tanii, M. Koh.K. Horita, K. Kara, B. Shigeta, M. Goto, S. Matusuda, S. Kuboyama, and I Ohdomari. "Total Dose Dependence of Softor Hardness in 64 Kbit SRAM's Evaluated by Single-ion Microprobe Technique," IEEE Trans. Nucl. Sei., Vol. 41, Pp. 2071-2076
-
-
Matsukawa, T.1
-
57
-
-
38949187696
-
-
1991.
-
I. Ohdomari, M. Sugimori, M. Koh, K. Noritake, M. Ishikawa, H. Shimizu, R. Tanaka, T. Kamiya, and N. Utsunomiya, "Ion Microprobe System at Waseda University." Nucl. Instrum. and Methods in Phys. Res., vol. B54, pp. 71-74, 1991.
-
M. Sugimori, M. Koh, K. Noritake, M. Ishikawa, H. Shimizu, R. Tanaka, T. Kamiya, and N. Utsunomiya, "Ion Microprobe System at Waseda University." Nucl. Instrum. and Methods in Phys. Res., Vol. B54, Pp. 71-74
-
-
Ohdomari, I.1
-
58
-
-
0027005182
-
-
1992.
-
K. Noritake, M. Koh, K. Ilara, M. Gog, and I. Ohdomari. "Single-event upset test of static random access memory using single-ion microprobe," Jpn.J. Appl. Phys.. vol. 31, pp. 4025-4028, 1992.
-
M. Koh, K. Ilara, M. Gog, and I. Ohdomari. "Single-event Upset Test of Static Random Access Memory Using Single-ion Microprobe," Jpn.J. Appl. Phys.. Vol. 31, Pp. 4025-4028
-
-
Noritake, K.1
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