Prediction of early lethal SEGR failures of VDMOSFETs for commercial space systems

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1640-1651

  Titus, J L ^a  

^a NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMERCIAL SPACE SYSTEMS; INTEGRAL FLUX CURVES; ION IMPACT ANGLES; LETHAL ION RATE; SINGLE EVENT GATE RUPTURE;

COMPUTER SIMULATION; FAILURE ANALYSIS; MONTE CARLO METHODS; RADIATION HARDENING; RELIABILITY; RISK ASSESSMENT; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0033315055     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819133     Document Type: Article

References (1)

1. K. A. LaBel, A. H. .lohnston, J. L. Barth, R. A. Reed, C, E.Barnes, Emerging Radiation Hardness Assurance (RHA) Issues: A NASA Approach for Space Flight Programs, IEEE Trans. Nucl. Sei., NS-45,No. 6, pp. 2727-2736, Dec. 1998.