Latent damage in CMOS devices from single-event latchup

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 3009-3015

  Becker, Heidi N ^a   Miyahira, Tetsuo F ^a   Johnston, Allan H ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Analog digital conversion; CMOS integrated circuits; Digital signal processors; Electromigration; Latent damage; Oscillators; Reliability; Single event latchup

Indexed keywords

DIGITAL SIGNAL PROCESSING; ELECTRIC CURRENTS; MELTING; MICROELECTRONICS; OSCILLATORS (ELECTRONIC);

SINGLE-EVENT LATCHUP;

CMOS INTEGRATED CIRCUITS;

EID: 0036956113     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805332     Document Type: Conference Paper

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