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Volumn 44, Issue 6 PART 1, 1997, Pages 2367-2377

Latchup in integrated circuits from energetic protons1

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; INTEGRATED CIRCUIT TESTING; IONS; MICROPROCESSOR CHIPS; PROTONS; SEMICONDUCTOR DEVICE MODELS;

EID: 0031354388     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659064     Document Type: Article
Times cited : (77)

References (23)
  • 1
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  • 2
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  • 7
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    • (1988) IEEE Trans. Elect. Dev., ED , vol.35 , pp. 1885
    • Aoki, T.1
  • 11
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    • (1984) IEEE Trans. Elect. Dev., ED , vol.31 , pp. 113
    • Fang, R.1    Moll, J.2
  • 13
    • 0020915915 scopus 로고
    • "Charge Deposition in Thin Slabs of Silicon Induced by Energetic Protons,"
    • S. El Teleaty, G. E. Farrell, and P. J. McNulty, "Charge Deposition in Thin Slabs of Silicon Induced by Energetic Protons," IEEE Trans. Nucl. Sei., NS30. 4394, (1983)
    • (1983) IEEE Trans. Nucl. Sei., NS , vol.30 , pp. 4394
    • El Teleaty, S.1    Farrell, G.E.2    McNulty, P.J.3
  • 14
    • 0030126279 scopus 로고    scopus 로고
    • "Approaches to Proton Single-Event Rate Calculations,"
    • E. L. Petersen, "Approaches to Proton Single-Event Rate Calculations," IEEE Trans. Nucl. Sei., NS43. pp. 496-520, 1996.
    • (1996) IEEE Trans. Nucl. Sei., NS , vol.43 , pp. 496-520
    • Petersen, E.L.1
  • 16
    • 0022865248 scopus 로고
    • "Revised Funnel Calculations for Heavy Particles with High dE/dx,"
    • T. R. Oldham, F. B. McLean and J. M. Hartman, "Revised Funnel Calculations for Heavy Particles with High dE/dx," IEEE Trans. Nucl. Sei., NS3.3. 1646 (1986).
    • (1986) IEEE Trans. Nucl. Sei., NS , vol.33 , pp. 1646
    • Oldham, T.R.1    McLean, F.B.2    Hartman, J.M.3
  • 17
    • 0028697670 scopus 로고
    • 'ThreeDimensional Simulation of Charge Collection and Multiple-Bit Upset in Si Devices,"
    • P. E. Dodd, F. W. Sexton, and P. S. Winokur, 'ThreeDimensional Simulation of Charge Collection and Multiple-Bit Upset in Si Devices," IEEE Trans. Nucl. Sei., NS41. 2005 (1994).
    • (1994) IEEE Trans. Nucl. Sei., NS , vol.41 , pp. 2005
    • Dodd, P.E.1    Sexton, F.W.2    Winokur, P.S.3
  • 18
    • 0030127490 scopus 로고    scopus 로고
    • "The Influence of VLSI Technology Evolution on Radiation-Induced Latchup in Space Systems,"
    • A. H. Johnston, "The Influence of VLSI Technology Evolution on Radiation-Induced Latchup in Space Systems," IEEE Trans. Nucl. Sei., NS43, pp. 505-521, 1996.
    • (1996) IEEE Trans. Nucl. Sei., NS , vol.43 , pp. 505-521
    • Johnston, A.H.1
  • 20
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    • "Implications of Angle of Incidence in SELF Testing of Modern Circuits,"
    • R. A. Reed, P. J. McNulty, and W. G. Abdel-Kader, "Implications of Angle of Incidence in SELF Testing of Modern Circuits," IEEE Trans. Nucl. Sei., NS41. pp. 2049-2054 (1994).
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  • 23
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    • "Device Simulation of Charge Collection and Single-Event Upset,"
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    • Dodd, P.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.