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Volumn 43, Issue 6 PART 1, 1996, Pages 2913-2920

First observations of power MOSFET burnout with high energy neutrons

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; NEUTRON IRRADIATION; POWER ELECTRONICS; PROTONS; RADIATION EFFECTS; SEMICONDUCTOR DEVICE TESTING; SPACECRAFT;

EID: 0030375854     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556885     Document Type: Article
Times cited : (81)

References (30)
  • 5
    • 33747236919 scopus 로고    scopus 로고
    • private communication.
    • P. Tastet, private communication.
    • Tastet, P.1
  • 28
    • 33747273173 scopus 로고    scopus 로고
    • International Rectifier Corporation, April 1996.
    • "HEXFET RELIABILITY REPORT", International Rectifier Corporation, April 1996.
    • HEXFET RELIABILITY REPORT


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.