A study of ion energy and its effects upon an SEGR-hardened stripe-cell MOSFET technology

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1879-1884

  Titus, Jeffrey L ^a,b   Wheatley, C Frank ^a,c   Gillberg, James E ^a,d   Burton, Donald I ^a,d  

^a IEEE   (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

^c Fairchild Semiconductor ^*  (United States)

^d FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

Charge deposition; Hexagonal cell; Ion energy; LET; Penetration depth; Power MOSFET; Single even gate rupture; Stripe cell; Tilt angle

Indexed keywords

CYCLOTRONS; ELECTRIC BREAKDOWN; ENERGY TRANSFER; ION BEAMS; IONIZATION; THRESHOLD VOLTAGE;

SINGLE EVENT GATE RUPTURE (SEGR);

MOSFET DEVICES;

EID: 0035723223     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983146     Document Type: Conference Paper

References (21)

1. Experimental studies of single event gate rupture and burnout in vertical power MOSFETs
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3. VDMOS power transistor drain-source resistance radiation dependence
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5. Radiation effects on MOS power transistors
6. Ionizing radiation effects on power MOSFET's during high speed switching
7. Development of a radiation hard n-channel power MOSFET
8. The effect of ionizing radiation on the breakdown voltage of power MOSFETs
9. Development of a cosmic ray hardened power MOSFET
10. SEGR response of a radiation hardened power MOSFET technology
11. Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs
12. Temperature and angular dependence of substrate response in SEGR
13. Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression
14. Prediction of early lethal failures of VDMOSFET's for commercial space systems
15. Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs
16. An improved stripe-cell SEGR hardened power MOSFET technology