Single-event upset and snapback in silicon-on-insulator devices and integrated circuits

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2165-2174

  Dodd, P E ^a,b   Shaneyfelt, M R ^a,b   Walsh, D S ^b   Schwank, J R ^a,b   Hash, G L ^a,b   Loemker, R A ^b   Draper, B L ^b   Winokur, P S ^a,b  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BODY TIE STRUCTURE; SINGLE EVENT SNAPBACK; SINGLE EVENT UPSET;

COMPUTER SIMULATION; IMPACT IONIZATION; INTEGRATED CIRCUITS; OXIDES; SUBSTRATES; THREE DIMENSIONAL; TRANSISTORS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034451489     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903749     Document Type: Conference Paper

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