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1
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0030127778
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J. L. Titus and C. F. Wheatley, "Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs," IEEE Trans. Nud. Sei. , Vol. 43, No. 2, pp. 533-545 (1996).
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"Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs," IEEE Trans. Nud. Sei. , Vol. 43, No. 2, Pp. 533-545 (1996).
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Titus, J.L.1
Wheatley, C.F.2
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2
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0030353809
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C. F. Wheatley, J. L. Titus, M. Allenspach, R. D. Schrimpf, D. I. Burton, J. R. Brews, K. P. Galloway, and R. L. Pease, "Influence of Ion Beam Energy on SEGR Failure Thresholds of Vertical Power MOSFETs," to be published in IEEE Trans. Nud. Sd. (Dec. 1996).
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J. L. Titus, M. Allenspach, R. D. Schrimpf, D. I. Burton, J. R. Brews, K. P. Galloway, and R. L. Pease, "Influence of Ion Beam Energy on SEGR Failure Thresholds of Vertical Power MOSFETs," to Be Published in IEEE Trans. Nud. Sd. (Dec. 1996).
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Wheatley, C.F.1
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3
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0030129775
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I. Mouret, P. Calvel, M. Allenspach, J. L. Titus, C. F. Wheatley, K. A. LaBel, M. C. Calvet, R. D. Schrimpf, and K. F. Galloway, "Measurement of a Cross-Section for Single-Event Gate Rupture in Power MOSFETs," IEEE Electron Dev. Lett. , Vol. 17, No. 4, pp. 163-165 (Apr. 1996).
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P. Calvel, M. Allenspach, J. L. Titus, C. F. Wheatley, K. A. LaBel, M. C. Calvet, R. D. Schrimpf, and K. F. Galloway, "Measurement of A Cross-Section for Single-Event Gate Rupture in Power MOSFETs," IEEE Electron Dev. Lett. , Vol. 17, No. 4, Pp. 163-165 (Apr. 1996).
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Mouret, I.1
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4
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J. H. Adams Jr. , A. J. Tylka, and B. Stiller, "LET Spectra in Low Earth Orbit," IEEE Trans, Nud. Sd. , Vol. NS-33, pp. 13861389 (1986).
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A. J. Tylka, and B. Stiller, "LET Spectra in Low Earth Orbit," IEEE Trans, Nud. Sd. , Vol. NS-33, Pp. 13861389 (1986).
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Adams Jr., J.H.1
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5
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0030370401
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G. H. Johnson, K. F. Galloway, R. D. Schrimpf, J. L. Titus, C. F. Wheatley, M. Allenspach, C. Dachs, "A Physical Interpretation for the Single-Event-Gate-Rupture Cross Section of N-Channel Power MOSFETs," to be published in IEEE Trans. Nud. Sd. (Dec. 1996).
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K. F. Galloway, R. D. Schrimpf, J. L. Titus, C. F. Wheatley, M. Allenspach, C. Dachs, "A Physical Interpretation for the Single-Event-Gate-Rupture Cross Section of N-Channel Power MOSFETs," to Be Published in IEEE Trans. Nud. Sd. (Dec. 1996).
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Johnson, G.H.1
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6
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0029462802
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1995.
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D. R. Carley, C. F. Wheatley, J. L. Titus, and D. I. Burton, "Power MOSFETs Hardened for Single-Event Effects (SEE) in Space," RADECS 95, Third European Conf. on Radiation and Its Effects on Components and Systems, pp. 253-256, 1995.
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C. F. Wheatley, J. L. Titus, and D. I. Burton, "Power MOSFETs Hardened for Single-Event Effects (SEE) in Space," RADECS 95, Third European Conf. on Radiation and Its Effects on Components and Systems, Pp. 253-256
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Carley, D.R.1
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