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Volumn 43, Issue 6 PART 1, 1996, Pages 2944-2951

SEGR response of a radiation-hardened power MOSFET technology

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; GATES (TRANSISTOR); POWER ELECTRONICS; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS;

EID: 0030365379     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556890     Document Type: Article
Times cited : (16)

References (6)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.