On the role of energy deposition in triggering SEGR in Power mosfetsr

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1403-1409

  Selva, Luis E ^a   Swift, Gary M ^a   Taylor, William A ^a   Edmonds, Larry D ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DEPOSITION; LINEAR ENERGY TRANSFERS; POWER DEVICES; SINGLE EVENT GATE RUPTURE; WROBEL OXIDE BREAKDOWN;

ELECTRIC BREAKDOWN; GATES (TRANSISTOR); INTERFACES (MATERIALS); IONS; MOSFET DEVICES; POWER INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; SILICA;

RADIATION EFFECTS;

EID: 0033345357     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819099     Document Type: Article

References (7)

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