Early lethal SEGR failures of VDMOSFETs considering nonuniformity in the rad-hard device distribution

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2217-2221

  Wheatley, Thomas H ^b   Wheatley, C Frank ^a,b   Titus, Jeffrey L ^a,c  

^a IEEE   (United States)

^b NAVSEA Crane ^*  (United States)

^c NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

Confidence level (CL); Early lethal failures; Lethal ion rate; Monte Carlo predictions; Power MOSFETs; Risk assessment technique; Single event gate rupture (SEGR)

Indexed keywords

GATES (TRANSISTOR); INTEGRATED CIRCUIT TESTING; ION BOMBARDMENT; MONTE CARLO METHODS; SAMPLING;

SINGLE-EVENT GATE RUPTURE (SEGR);

MOSFET DEVICES;

EID: 0035723331     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983198     Document Type: Conference Paper

References (8)

1. Prediction of early lethal SEGR failures of VDMOSFET's for commercial space systems
2. Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs
3. A physical interpretation for the single-event gate rupture cross section of n-channel power MOSFETs
4. Measurement of a cross section for single event gate rupture in power MOSFETs
5. Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs
6. Experimental evidence of the temperature and angular dependence in SEGR
7. Temperature and angular dependence of substrate response in SEGR
8. Impact of oxide thickness on SEGR failures in vertical power MOSFETs: Development of a semiempirical expression