The impact of single event gate rupture in linear devices

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2373-2379

  Lum, Gary K ^a,b   O'Donnell, Hugh ^a,b   Boruta, Nicholas ^a,b  

^a IEEE   (United States)

^b LOCKHEED MARTIN SPACE SYSTEMS COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LINEAR DEVICES; LINEAR ENERGY TRANSFER; SINGLE EVENT GATE RUPTURE;

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; FAILURE ANALYSIS; HEAVY IONS; INTEGRATED CIRCUIT TESTING; LINEAR INTEGRATED CIRCUITS; OPERATIONAL AMPLIFIERS; SEMICONDUCTOR DEVICES; SPACE APPLICATIONS;

RADIATION DAMAGE;

EID: 0034451281     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903779     Document Type: Conference Paper

References (12)

1. On heavy ion induced hard-errors in dielectric structures
2. An experimental survey of heavy ion induced dielectric rupture in actel field programmable gate arrays (FPGAs)
3. Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs
4. Single-event gate rupture in vertical power MOSFETs: An original empirical expression
5. Prediction of early lethal SEGR failures of VDMOSFETs for commercial space systems
6. Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression
7. Single event gate rupture in thin gate oxides
8. Breakdown of gate oxides during irradiation with heavy ions
9. Recent radiation damage and single event effect results for microelectronics
10. Destructive failure of OP470/OP471 operational amplifiers due to breakdown of gate oxides during space radiation performance qualification
11. System hardening approaches for a LEO satellite with radiation tolerant parts
12. Latchup in integrated circuits from energetic protons