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I. Mouret, M.-C. Calvet, P. Calvel, P. Tastet, M. Allenspach, K. A. LaBel, J. L. Titus, C. F. Wheatley, R. D. Schrimpf, and K. F. Galloway, "Experimental Evidence of the Temperature and Angular Dependence in SEGR," RADECS 95, Third European Conference on Radiation and its Effects on Components and Systems.
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M.-C. Calvet, P. Calvel, P. Tastet, M. Allenspach, K. A. LaBel, J. L. Titus, C. F. Wheatley, R. D. Schrimpf, and K. F. Galloway, "Experimental Evidence of the Temperature and Angular Dependence in SEGR,"
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M. Allenspach, I. Mouret, J. R. Brews, R. D. Schrimpf, K. F. Galloway, J. L. Titus, C. F. Wheatley, Jr., and R. L. Pease, "Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence," IEEE Trans. Nucl. Sei., NS-42, No. 6, pp. 1922-1927, Dec. 1995.
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J. L. Titus, C. F. Wheatley, D. I. Burton, M. Allenspach, J. Brews, R. D, Schrimpf, K. Galloway, I. Mouret, and R. L. Pease, "Impact of Oxide Thickness on SEGR Failure in Vertical Power MOSFETs; Development of a SemiEmpirical Expression," IEEE Trans. Nucl. Sei., NS-42, No. 6, pp. 1928-1934, Dec. 1995.
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C. F. Wheatley, D. I. Burton, M. Allenspach, J. Brews, R. D, Schrimpf, K. Galloway, I. Mouret, and R. L. Pease, "Impact of Oxide Thickness on SEGR Failure in Vertical Power MOSFETs; Development of a SemiEmpirical Expression,"
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J. L. Wert, E. Normand, and S. A. Wender, "First Observations of Power MOSFET Burnout with High Energy Neutrons,"
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J. W. Adolphsen, J. L. Barth, and G. B. Gee, "First Observations of Proton Induced Power MOSFET Burnout in Space: The CRUX Experiment on APEX," IEEE Trans. Nud. Sei., NS-43, No. 6, pp. 2921-2926, Dec. 1996.
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J. L. Barth, and G. B. Gee, "First Observations of Proton Induced Power MOSFET Burnout in Space: the CRUX Experiment on APEX,"
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G. H. Johnson, K.F. Galloway, R.D. Schrimpf, J. L. Titus, C. F. Wheatley, M. Allenspach, and C. Dachs, "A Physical Interpretation for the Single Event Gate Rupture Cross Section of N-Channel Power MOSFETs," IEEE Trans. Nud. Sei., NS-43, No. 6, pp. 2932-2937, Dec. 1996.
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K.F. Galloway, R.D. Schrimpf, J. L. Titus, C. F. Wheatley, M. Allenspach, and C. Dachs, "A Physical Interpretation for the Single Event Gate Rupture Cross Section of N-Channel Power MOSFETs,"
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J. L. Titus, C. F. Wheatley, M. Allenspach, R. D. Schrimpf, D. I. Burton, J. R. Brews, K. F. Galloway, and R. L. Pease, "Influence of Ion Beam Energy on SEGR Failure Thresholds of Vertical Power MOSFETs," IEEE Trans. Nud. Sd., NS-43, No. 6, pp. 2938-2943, Dec. 1996.
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C. F. Wheatley, M. Allenspach, R. D. Schrimpf, D. I. Burton, J. R. Brews, K. F. Galloway, and R. L. Pease, "Influence of Ion Beam Energy on SEGR Failure Thresholds of Vertical Power MOSFETs,"
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J. L. Titus, C. F. Wheatley, K. M. Van Tyne, J. F. Krieg, and D. I. Burton, "Effects of Ion Energy Upon the Dielectric Breakdown Failure Mechanism in Vertical Power MOSFETs," IEEE Trans. Nud. Sei., NS-45, No. 6, Dec. 1998.
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C. F. Wheatley, K. M. Van Tyne, J. F. Krieg, and D. I. Burton, "Effects of Ion Energy upon the Dielectric Breakdown Failure Mechanism in Vertical Power MOSFETs,"
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