Analysis of SEB and SEGR in super-junction MOSFETs

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2640-2647

  Huang, S ^b   Amaratunga, G A J ^a,b   Udrea, F ^a,b  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SINGLE EVENT BURN-OUT; SINGLE EVENT GATE RUPTURE;

COMPUTER SIMULATION; ELECTRIC FIELDS; HEAVY IONS; IMPACT IONIZATION; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

MOSFET DEVICES;

EID: 0034451097     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903820     Document Type: Conference Paper

References (18)

1. Evaluation of SEGR threshold in power MOSFETs
2. Simulating single-event burnout of n-channel power MOSFETs
3. COOLMOS-An important milestone toward a new power MOSFET generation
4. A new generation of high voltage MOSFETs breaks the limit line of silicon
5. Properties of COOLMOS™ between 420K and 80K-The ideal device for cryogenic application
6. COOLMOS™-A new milestone in high voltage power MOS
7. MDmesh™: Innovative technology for high voltage power MOSFETs
8. Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)
9. Experimental and 2D simulation study of the single event burnout in N power MOSFETs
10. A review of the techniques used for the modeling single-event effects in power MOSFETs
11. Single-event gate-rupture in power MOSFETs: Prediction of breakdown biases and evaluation of oxide thickness dependence
12. Temperature and angular dependence of substrate response in SEGR
13. Impact of oxide thickness on SEGR failure in vertical power MOSFETs: Development of a semi-empirical expression