An improved stripe-cell SEGR hardened power MOSFET technology

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1872-1878

  Savage, Mark W ^a,b   Burton, Donald I ^a,c   Wheatley, C Frank ^a,d   Titus, Jeffrey L ^a,b   Gillberg, James E ^a,c  

^a IEEE   (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

^c FAIRCHILD SEMICONDUCTOR   (United States)

^d NONE   (United States)

Author keywords

Hardened technology; Hexagonal cell; LET; Power MOSFET; Roll angle; Single event gate rupture (SEGR); Stripe cell; Tilt angle

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC RESISTANCE; IONS; RADIATION HARDENING;

SINGLE EVENT GATE RUPTURE (SEGR);

MOSFET DEVICES;

EID: 0035721727     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983145     Document Type: Conference Paper

References (17)

1. Experimental studies of single event gate rupture and burnout in vertical power MOSFETs
2. Radiation hardening of vertical DMOS (VDMOS) power MOSFETs
3. SEGR response of a radiation hardened power MOSFET technology
4. Development of a cosmic ray hardened power MOSFETs
5. VDMOS power transistor drain-source resistance radiation dependence
6. Dose rate tolerant HEXFET power supply
7. Radiation effects on MOS power transistors
8. Ionizing radiation effects on power MOSFET's during high speed switching
9. Development of a radiation hard N-channel power MOSFET
10. The effect of ionizing radiation on the breakdown voltage of power MOSFETs
11. A conceptual model of single-event gate rupture in power MOSFETs
12. Transient ionization and single-event phenomena
13. Prediction of early lethal failures of VDMOSFET's for commercial space systems