Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering

Applied Physics Letters

Volumn 74, Issue 25, 1999, Pages 3863-3865

  Wagner, J ^a   Ramakrishnan, A ^a   Obloh, H ^a   Maier, M ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; NITRIDES; PHONONS; PIEZOELECTRICITY; RAMAN SCATTERING; RESONANCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032607576     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124205     Document Type: Article

References (15)

1. See, e.g., S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
2. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L382 (1997).
3. A. Hangleiter, I. S. Im, H. Kollmer, S. Heppel, J. Off, and F. Scholz, MRS Internet J. Nitride Semicond. Res. 3, Article 15 (1998).
4. H. Amano, T. Takeuchi, S. Sota, H. Sakai, and I. Akasaki, Mater. Res. Soc. Symp. Proc. 449, 1143 (1997).
5. F. Scholz, J. Off, A. Kniest, L. Görgens, and O. Ambacher, Mater. Sci. Eng. B (to be published).
6. T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, Appl. Phys. Lett. 73, 1691 (1998).
7. S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, Appl. Phys. Lett. 73, 2006 (1998).
8. D. Behr, R. Niebuhr, J. Wagner, K. H. Bachem, and U. Kaufmann, Appl. Phys. Lett. 70, 363 (1997).
9. D. Behr, R. Niebuhr, H. Obloh, J. Wagner, K. H. Bachem, and U. Kaufmann, Mater. Res. Soc. Symp. Proc. 468, 213 (1997).
10. D. Behr, J. Wagner, A. Ramakrishnan, H. Obloh, and K.-H. Bachem, Appl. Phys. Lett. 73, 241 (1998).
11. J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Obloh, and K.-H. Bachem, MRS Internet J. Nitride Semicond. Res. 4S1, G2.8 (1999).
12. T. Azuhata, T. Sota, K. Suzuki, and S. Nakamura, J. Phys.: Condens. Matter 7, L129 (1995).
13. F. Demanget, J. Frandon, M. A. Renucci, O. Briot, B. Gil, and R. L. Aulombard, Solid State Commun. 100, 207 (1996).
14. See, e.g., G. Abstreiter, M. Cardona, and A. Pinczuk, in Light Scattering in Solids IV, edited by M. Cardona and G. Güntherodt (Springer, Berlin, 1984), p. 108.
15. 1 spectrum for an InGaN layer width of 12 nm, as compared to thicker InGaN layers 26 and 54 nm in width [A. Ramakrishnan, J. Wagner, H. Obloh, and M. Kunzer (unpublished)].