Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1252-1254

  Murphy, M J ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644452040     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590733     Document Type: Article

References (10)

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