Optical and electrical properties of Al1 - xInxN films grown by plasma source molecular-beam epitaxy

Applied Physics Letters

Volumn 79, Issue 5, 2001, Pages 632-634

  Lukitsch, M J ^a   Danylyuk, Y V ^a   Naik, V M ^a,c   Huang, C ^a   Auner, G W ^a   Rimai, L ^a   Naik, R ^b  

^a Wayne State University   (United States)

^b WAYNE STATE UNIVERSITY   (United States)

^c UNIVERSITY OF MICHIGAN DEARBORN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040029069     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1388883     Document Type: Article

References (11)

1. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, J. Appl. Phys. 87, 965 (2000).
2. S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki, Appl. Phys. Lett. 76, 876 (2000), and references therein.
3. T. Peng, J. Piprek, G. Qiu, J. O. Olowoiafe, K. M. Unruh, C. P. Swann, and E. F. Shubert, Appl. Phys. Lett. 71, 2439 (1997).
4. K. S. Kim, A. Saxler, P. Kung, M. Razaghi, and K. Y. Lim, Appl. Phys. Lett. 71, 800 (1997).
5. O. Guo, H. Ogawa, and A. Yoshida, J. Cryst. Growth 146, 462 (1995).
6. K. Kubota, Y. Kobayashi, and K. Fujimoto, J. Appl. Phys. 66, 2984 (1989).
7. T. Matsuoka, Appl. Phys. Lett. 71, 105 (1997).
8. G. W. Auner, T. D. Lenane, F. Ahmad, R. Naik, P. K. Kuo, and Z. L. Wu, Wide Band Gap Electronic Materials (Academic, New York, 1995), p. 329.
9. J. C. Tauc, Optical Properties of Solids (North-Holland, Amsterdam, 1972), p. 372.
10. C. H. Grein and S. John, Phys. Rev. B 39, 1140 (1989).
11. M. Goano, E. Bellotti, E. Ghillino, C. Garetto, G. Ghione, and K. F. Brennen, J. Appl. Phys. 88, 6476 (2000).