The influence of spontaneous and piezoelectric polarization on novel AlGaN/GaN/ingan device structures

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 501-506

  Foutz, B E ^a   Murphy, M J ^a   Ambacher, O ^a   Tilak, V ^a   Smart, J A ^a   Shealy, J R ^a   Schaff, W J ^a   Eastman, L F ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRON GAS; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HALL EFFECT MEASUREMENT; INDIUM GALLIUM NITRIDE; NITRIDE SEMICONDUCTORS; PIEZOELECTRIC POLARIZATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0033342289     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-501     Document Type: Article

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