The influence of spontaneous and piezoelectric polarization on novel AlGaN/GaN/ingan device structures

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 501-506

  Foutz, B E ^a   Murphy, M J ^a   Ambacher, O ^a   Tilak, V ^a   Smart, J A ^a   Shealy, J R ^a   Schaff, W J ^a   Eastman, L F ^a  

^a Department of Population Medicine and Diagnostic Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRON GAS; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HALL EFFECT MEASUREMENT; INDIUM GALLIUM NITRIDE; NITRIDE SEMICONDUCTORS; PIEZOELECTRIC POLARIZATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0033342289     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-501     Document Type: Article

References (9)

1. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
2. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Reiger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).
3. P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove, and J. Redwing, Elec. Lett. 33, 1230 (1997).
4. A. D. Bykhovski, R. Gaska, M. S. Shur, Appl. Phys. Lett. 73, 3577 (1998).
5. A. F. Wright, J. Appl. Phys. 82 2833 (1997).
6. F. D. Sala, A. D. Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, J.-M. Jancu, Appl. Phys. Lett. 74, 2002 (1999).
7. I-H. Tan, G. L. Snider, L. D. Chang, and E. L. Hu, J. Appl. Phys. 68 4071 (1990).
8. S. Wei, A. Zunger, Appl. Phys. Lett. 69, 2719 (1996).
9. M. J. Murphy, B. E. Foutz, K. Chu, H. Hu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger, MRS Internet J. Nitride Semicond. Res. 4S1, G8.4 (1999).