On interface and oxide degradation in VLSI MOSFETs - Part II: Fowler-Nordheim stress regime

IEEE Transactions on Electron Devices

Volumn 49, Issue 2, 2002, Pages 254-263

  Esseni, David ^b,c   Bude, Jeff D ^a,b   Selmi, Luca ^c  

^a IEEE

^b AGERE SYSTEMS   (United States)

^c UNIVERSITY OF UDINE   (Italy)

Author keywords

Anode hole injection (AHI); High fields oxide stress; Interface states; MOSFETs reliability; Stress induced leakage current (SILC)

Indexed keywords

ANODES; DEGRADATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; ELECTRON TUNNELING; HOT CARRIERS; HYDROGEN; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDES; STRESSES; VLSI CIRCUITS;

ANODE HOLE INJECTION; DEUTERIUM ANNEALING; FOWLER NORDHEIM TUNNELING STRESS MEASUREMENTS; GATE VOLTAGES; HIGH FIELDS OXIDE STRESS; HOT HOLE INJECTION; HYDROGEN RELEASE; OXIDE DEGRADATION; STRESS INDUCED LEAKAGE CURRENT; THIN OXIDES;

MOSFET DEVICES;

EID: 0036475593     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.981215     Document Type: Article

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