Can macroscopic oxide thickness uniformity improve oxide reliability?

IEEE Electron Device Letters

Volumn 21, Issue 8, 2000, Pages 402-404

  Wu, Ernest Y ^a   Nowak, Edward J ^a   Vollertsen, R P ^b  

^a IBM MICROELECTRONICS   (United States)

^b INFINEON TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; MONTE CARLO METHODS; SENSITIVITY ANALYSIS;

WEIBULL BREAKDOWN CHARACTERISTICS;

OXIDES;

EID: 0034250374     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.852964     Document Type: Article

References (13)

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12. E. Y. Wu, E. J. Nowak, and R.-P. Vollertsen, IEEE. Trans. Electron Devices, to be published.
13. B. Weir et al., "Gate oxide reliability projection to the sub-2 nm regime," Semicond. Sci. Technol., vol. 15, p. 455, 2000.