Extraction of slow oxide trap concentration profiles in metal-oxide-semiconductor transistors using the charge pumping method

Journal of Applied Physics

Volumn 79, Issue 8, 1996, Pages 4187-4192

  Maneglia, Y ^a   Bauza, D ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001323172     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361786     Document Type: Article

References (13)

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