메뉴 건너뛰기




Volumn 45, Issue 11, 1998, Pages 2355-2360

Polarity dependent gate tunneling currents in dual-gate CMOSFET's

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; SEMICONDUCTING SILICON;

EID: 0032202447     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.726656     Document Type: Article
Times cited : (128)

References (11)
  • 1
    • 84949585169 scopus 로고
    • Ultra-thin silicon dioxide leakage current and scaling limit
    • June
    • K. F. Schuegraf, C. C. King, and C. Hu, "Ultra-thin silicon dioxide leakage current and scaling limit," in Dig. 1992 Symp. VLSI., June 1992, pp. 18-19.
    • (1992) Dig. 1992 Symp. VLSI. , pp. 18-19
    • Schuegraf, K.F.1    King, C.C.2    Hu, C.3
  • 2
    • 0031140867 scopus 로고    scopus 로고
    • Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide in nMOSFET's
    • May
    • S.-H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, "Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide in nMOSFET's," IEEE Electron Device Lett., vol. 18, p. 209, May 1997.
    • (1997) IEEE Electron Device Lett. , vol.18 , pp. 209
    • Lo, S.-H.1    Buchanan, D.A.2    Taur, Y.3    Wang, W.4
  • 3
    • 0028430427 scopus 로고
    • 2 breakdown model for very low voltage lifetime extrapolation
    • May
    • 2 breakdown model for very low voltage lifetime extrapolation," IEEE Trans. Electron Device, vol. 41, May 1994.
    • (1994) IEEE Trans. Electron Device , vol.41
    • Scheugraf, K.F.1    Hu, C.2
  • 4
    • 33747344136 scopus 로고    scopus 로고
    • Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection
    • E. Wu et al., "Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection," in Proc 1997 IEEE Int. Reliability Physics Conf..
    • Proc 1997 IEEE Int. Reliability Physics Conf.
    • Wu, E.1
  • 5
    • 0029545395 scopus 로고
    • 2O gate oxynitrides for low-voltage operation of dual gate CMOSFET's
    • 2O gate oxynitrides for low-voltage operation of dual gate CMOSFET's," in IEDM Tech. Dig. 1995, p. 851.
    • (1995) IEDM Tech. Dig. , pp. 851
    • Matsuoka, T.1
  • 7
    • 36549102659 scopus 로고
    • Substrate hole current and oxide breakdown
    • Sept.
    • I. C. Chen, S. Holland, K. K. Young, C. Chang, and C. Hu, "Substrate hole current and oxide breakdown," Appl. Phys. Lett., vol. 49, no. 11, p. 669, Sept. 1986.
    • (1986) Appl. Phys. Lett. , vol.49 , Issue.11 , pp. 669
    • Chen, I.C.1    Holland, S.2    Young, K.K.3    Chang, C.4    Hu, C.5
  • 8
    • 36749112620 scopus 로고
    • Two components of tunneling current in metal-oxide-semiconductor structures
    • July
    • B. Eitan and A. Kolodny, "Two components of tunneling current in metal-oxide-semiconductor structures," Appl. Phys. Lett., vol. 43, no. 1, p. 106, July 1983.
    • (1983) Appl. Phys. Lett. , vol.43 , Issue.1 , pp. 106
    • Eitan, B.1    Kolodny, A.2
  • 9
    • 0029307414 scopus 로고
    • Hole trapping, substrate current, and breakdown in thin silicon dioxide films
    • May
    • D. J. DiMaria, "Hole trapping, substrate current, and breakdown in thin silicon dioxide films," IEEE Electron Device Lett., vol. 16, p. 184, May 1995.
    • (1995) IEEE Electron Device Lett. , vol.16 , pp. 184
    • DiMaria, D.J.1
  • 10
    • 36449003773 scopus 로고
    • Model for the substrate hole current based on thermionic hole emission from the anode during Fowler-Nordheim electron tunneling in n-channel metal-oxide-semiconductor field-effect transistors
    • Apr.
    • K. Kobayashi, A. Teramoto, and M. Hirayama, "Model for the substrate hole current based on thermionic hole emission from the anode during Fowler-Nordheim electron tunneling in n-channel metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 77, no. 7, p. 3277, Apr., 1995.
    • (1995) J. Appl. Phys. , vol.77 , Issue.7 , pp. 3277
    • Kobayashi, K.1    Teramoto, A.2    Hirayama, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.