Polarity dependent gate tunneling currents in dual-gate CMOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 11, 1998, Pages 2355-2360

  Shi, Ying ^a,b   Ma, T P ^a,b   Prasad, Sharad ^a,c   Dhanda, Sumit ^a,c  

^a IEEE   (United States)

^b Yale University   (United States)

^c AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; SEMICONDUCTING SILICON;

POLARITY DEPENDENT GATE TUNNELING;

MOSFET DEVICES;

EID: 0032202447     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.726656     Document Type: Article

References (11)

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