A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO2 films

IEEE Transactions on Electron Devices

Volumn 44, Issue 6, 1997, Pages 1002-1008

  Sakakibara, Kiyohiko ^a   Ajika, Natsuo ^a   Eikyu, Katsumi ^a   Ishikawa, Kiyoshi ^a   Miyoshi, Hirokazu ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; STRESSES; SUBSTRATES;

FOWLER NORDHEIM (FN) STRESSES; STRESS INDUCED LEAKAGE CURRENTS (SILC);

SILICA;

EID: 0031164527     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.585557     Document Type: Article

References (8)

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