Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films

IEEE Transactions on Electron Devices

Volumn 45, Issue 7, 1998, Pages 1554-1560

  Riccö, Bruno ^a   Gozzi, Gianfranco ^a   Lanzoni, Massimo ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

MOS capacitors; Reliability; SILC; Thin oxides; Tunnel injection

Indexed keywords

CAPACITORS; ELECTRIC CURRENTS; MATHEMATICAL MODELS; RELIABILITY; SILICA; STRESSES; THIN FILMS;

TUNNEL JUNCTION;

MOSFET DEVICES;

EID: 0032123911     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.701488     Document Type: Article

References (13)

1. P. Olivo, T. Nguyen, and B. Riccö, "High field induced degradation in ultrathin SiU2 films," IEEE Trans. Electron Devices, vol. 35, p. 2259, Dec. 1988.
2. N. K. Patel and A. Toriumi, "Stress-induced leakage current in ultrathin SiO2 films," Appl. Phys. Lett., vol. 64, no. 14, p. 1809, 1994.
3. J. DeBlauwe, J. Van Houdt, D. Wellekens, R. Degraeve, Ph. Roussel, L. Haspeslagh, L. Deferm, G. Groeseneken, and H. E. Maes, "A new quantitative model to predict SILC-related disturb characteristics in flash EEPROM devices," in Proc. IEEE IEDM, 1996, p. 343.
4. J. S. Dumin and J. R. Maddux, "Correlation of stress-induced leakage current in thin oxide with trap generation inside the oxides," IEEE Trans. Electron Devices, vol. 40, p. 986, May 1993.
5. S. Takagi, N. Yasuda, and A. Toriumi, "Experimental evidence of inelastic tunneling and new /- V model for stress-induced leakage current," in Proc. IEEE IEDM, 1996, p. 323.
6. B. Riccö et al, "Oxide-thickness determination in thin-insulator MOS structures,' IEEE Trans. Electron Devices, vol. 35, p. 432, Apr. 1988.
7. M. Depas, T. Nigam, and M. M. Heyns, "Soft breakdown of ultrathin gate oxide layers," IEEE Trans. Electron Devices, vol. 43, p. 1499, Sept. 1996.
8. R. S. Scott et al., "Properties of high-voltage stress generated traps in thin silicon oxide," IEEE Trans. Electron Devices, vol. 43, p. 1133, July 1996.
9. P. Olivo, B. Riccö, and E. Sangiorgi, "Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime," J. Appl. Phys., vol. 54, no. 9, p. 5267, Sept. 1983.
10. R. Moazzami and C. Hu, "Stress-induced current in thin silicon dioxide films," in Proc. IEEE IEDM, 1992, p. 139.
11. K. R. Farmer, M. Andersson, and O. Engstrom, "Tunnel electron induced charge generation in very thin silicon oxide dielectrics," Appl. Phys. Lett., vol. 58, no. 23, p. 2666, June 1991.
12. Z. A. Weinberg, "Tunneling of electrons from Si into thermally grown SiO2," Solid-State Electron., vol. 20, p. 11, 1977.
13. M. Zambuto, Semiconductors Devices. New York: McGraw-Hill, 1989, p. 103.