A new I-V model for stress-induced leakage current including inelastic tunneling

IEEE Transactions on Electron Devices

Volumn 46, Issue 2, 1999, Pages 348-354

  Takagi, Shin Ichi ^a   Yasuda, Naoki ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Leakage currents; MOS devices; Semiconductor device reliability; Tunneling

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; INDUCED CURRENTS; LEAKAGE CURRENTS; MOSFET DEVICES;

FOWLER-NORDHEIM (FN) PLOT; STRESS INDUCED LEAKAGE CURRENTS (SILC);

SEMICONDUCTOR DEVICE MODELS;

EID: 0033080327     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740901     Document Type: Article

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