Oxygen vacancy with large lattice distortion as an origin of leakage currents in SiO2

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 703-706

  Yokozawa, Ayumi ^a   Oshiyama, Atsushi ^a   Miyamoto, Yoshiyuki ^a   Kumashiro, Shigetaka ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAP; OXYGEN VACANCY; SMALL LATTICE DISTORTED STRUCTURE (SLDS);

BAND STRUCTURE; CRYSTAL LATTICES; ELECTRON ABSORPTION; LEAKAGE CURRENTS; SILICA;

SEMICONDUCTING FILMS;

EID: 84886447998     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)