Role of hole fluence in gate oxide breakdown

IEEE Electron Device Letters

Volumn 20, Issue 11, 1999, Pages 586-588

  Li, M F ^a   He, Y D ^a   Ma, S G ^a   Cho, B J ^a   Lo, K F ^b   Xu, M Z ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ENERGY GAP;

FOWLER-NORDHEIM (FN) ELECTRON INJECTIONS; GATE OXIDE BREAKDOWN;

MOS DEVICES;

EID: 0033221831     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.798052     Document Type: Article

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