Origin of positive charge generated in thin SiO2 films during high-field electrical stress

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 947-953

  Kobayashi, Kiyoteru ^a   Teramoto, Akinobu ^a   Miyoshi, Hirokazu ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

FOWLER-NORDHEIM ELECTRON INJECTION; HIGH FIELD ELECTRICAL STRESS;

MOS DEVICES;

EID: 0032664320     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760402     Document Type: Article

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