SILC-related effects in flash e2PROM's-Part II: Pratediction of steady-ste SILC-related disturb characteristics

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1751-1760

  De Blauwe, Jan ^a,b   Van Houdt, Jan ^a,b   Wellekens, Dirk ^a,b   Groeseneken, Guido ^a,b   Macs, Herman E ^a,b  

^a IEEE   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT DENSITY; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; PROM;

NON VOLATILE MEMORIES; STRESS INDUCED LEAKAGE CURRENT; TUNNEL OXIDE;

LEAKAGE CURRENTS;

EID: 0032142164     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704375     Document Type: Article

References (13)

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